| PART |
Description |
Maker |
| RFH35N10 RFH35N08 |
POWER MOS FIELD - EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| NDP6020P NDB6020P |
P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管（漏电流-24A, 漏源电压-20V，导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
| PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB
Ericsson Microelectronics
|
| IRFF130 IRFF131 IRFF132 IRFF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A.
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.
|
General Electric Solid State
GE Solid State
|
| MAPLST1617-030CF |
RF Power Field Effect Transistor
|
Tyco Electronics
|
| MTM40N20 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
|
| MRF6S21100NR1 MRF6S21100NBR1 |
RF Power Field Effect Transistors
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MRF8S19140HR3 MRF8S19140HSR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor
|
| MRF141 |
RF FIELD-EFFECT POWER TRANSISTOR
|
Advanced Semiconductor
|
| MTM15N05L MTM15N06L MTP15N05EL MTP15N06L MTP15N05L |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc.
|
| MTP12N10L |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
